STD10NF10T4 - N-Channel MOSFET

Datasheet Summary

Features

TrenchFET® Power MOSFET.
175 °C Junction Temperature.
PWM Optimized.
100 % Rg Tested.
Compliant to RoHS Directive 2002/95/EC.

VBsemi

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Datasheet Details

Part number	STD10NF10T4
Manufacturer	VBsemi
File Size	374.46 KB
Description	N-Channel MOSFET
Datasheet	STD10NF10T4 Datasheet
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STD10NF10T4 STD10NF10T4 Datasheet www.VBsemi.com N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID (A) 15 D TO-252 FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Avalanche Current IAS Single Pulse Avalanche Energy L = 0.

Published: Oct 15, 2024 |