STT3585 - N- and P-Channel 20V MOSFET

VBsemi

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
Trench Power MOSFET.
100 % Rg Tested.
Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View G1 1 6 D1 3 mm S2 2 5 S1 G2 3 4 D2 2.85 mm D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET.

STT3585 n- and p-channel 20v mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	STT3585
Manufacturer	VBsemi
File Size	361.44 KB
Description	N- and P-Channel 20V MOSFET
Datasheet	STT3585 Datasheet

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STT3585-VB STT3585-VB Datasheet N- and P-Channel 20V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY N-Channel P-Channel VDS (V) 20 - 20 RDS(on) (Ω) 0.022 at VGS = 10 V 0.030at VGS = 4.5 V 0.055 at VGS = - 10 V 0.079 at VGS = - 4.5 V ID (A) 5.5 4.2 - 3.4 - 2.5 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Trench Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View G1 1 6 D1 3 mm S2 2 5 S1 G2 3 4 D2 2.85 mm D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 - 20 Gate-Source Voltage VGS ± 20 ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID 5.5 - 3.