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SUB85N03-07P - N-Channel 30-V MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS Directive 2011/65/EU.

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SUB85N03-07P N-Channel 30-V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0038 at VGS = 10 V 0.0044 at VGS = 4.5 V ID (A)a, e 98 98 Qg (Typ) 82 nC I2PAK (TO-262) VBNC1303 D2PAK (TO-263) G D S VBL1303 FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 TC = 25 °C 98a, e Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID 98e 28.8b, c A TA = 70 °C 27b, c Pulsed Drain Current IDM 300 Avalanche Current Pulse Single Pulse Avalanche Energy IAS 36 L = 0.