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SUB85N03-07P
N-Channel 30-V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () 0.0038 at VGS = 10 V 0.0044 at VGS = 4.5 V
ID (A)a, e 98 98
Qg (Typ) 82 nC
I2PAK (TO-262)
VBNC1303
D2PAK (TO-263)
G D S
VBL1303
FEATURES • TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
• OR-ing
• Server
• DC/DC
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
30
V
VGS
± 20
TC = 25 °C
98a, e
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
ID
98e 28.8b, c
A
TA = 70 °C
27b, c
Pulsed Drain Current
IDM
300
Avalanche Current Pulse Single Pulse Avalanche Energy
IAS
36
L = 0.
SUB85N03-07P Datasheet
