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Si7252ADP - Dual N-Channel 100V MOSFET

Key Features

  • 175 °C Junction Temperature.
  • Trench technology Power MOSFET.
  • Material categorization: DFN5X6 D1 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET.

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Datasheet Details

Part number Si7252ADP
Manufacturer VBsemi
File Size 449.31 KB
Description Dual N-Channel 100V MOSFET
Datasheet download datasheet Si7252ADP Datasheet

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Si7252ADP-VB Si7252ADP-VB Datasheet Dual N-Channel 100V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.018at VGS = 10 V 0.022at VGS = 4.5 V ID (A)a 35 36 FEATURES • 175 °C Junction Temperature • Trench technology Power MOSFET • Material categorization: DFN5X6 D1 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ±20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C ID 35 20a Pulsed Drain Current IDM 105 A Continuous Source Current (Diode Conduction) IS 76a Avalanche Current IAS 82 Single Avalanche Energy (Duty Cycle  1 %) L = 0.