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T1350-VB TO251
T1350-VB TO251 Datasheet P-Channel 40 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) - 40
RDS(on) () 0.010 at VGS = - 10 V 0.014 at VGS = - 4.5 V
ID (A)a ± 55 ± 54
FEATURES • Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
TO-251
S
G
GDS Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current
TC = 25 °C TC = 125 °C
Avalanche Current Repetitive Avalanche Energyb
L = 0.