Datasheet4U Logo Datasheet4U.com

T254L - N-Channel 150V MOSFET

Features

  • Trench Power MOSFETs.
  • 175 °C Junction Temperature.
  • New Low Thermal Resistance Package.
  • PWM Optimized.
  • Compliant to RoHS Directive 2002/95/EC.

📥 Download Datasheet

Datasheet preview – T254L

Datasheet Details

Part number T254L
Manufacturer VBsemi
File Size 240.85 KB
Description N-Channel 150V MOSFET
Datasheet download datasheet T254L Datasheet
Additional preview pages of the T254L datasheet.

📁 Similar Datasheet

  • T25 - 25A TRIACs (STMicroelectronics)
  • T2500 - Thyristors (RCA)
  • T2500 - TRIACs (Motorola)
  • T2500BFP - ISOLATED TRIACs THYRISTORS (Motorola)
  • T2500D - Silicon Bidirectional Thyristors (ON Semiconductor)
  • T2500DFP - ISOLATED TRIACs THYRISTORS (Motorola)
  • T2500FP - ISOLATED TRIACs THYRISTORS (Motorola)
  • T2500MFP - ISOLATED TRIACs THYRISTORS (Motorola)
  • T2500NFP - ISOLATED TRIACs THYRISTORS (Motorola)
  • T2510N - Phase Control Thyristor (Infineon)
Other Datasheets by VBsemi

    Full PDF Text Transcription

    Click to expand full text
    T254L-VB T254L-VB Datasheet N-Channel 150-V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 0.030 at VGS = 10 V 0.033 at VGS = 6 V ID (A) 50 45 TO-220AB FEATURES • Trench Power MOSFETs • 175 °C Junction Temperature • New Low Thermal Resistance Package • PWM Optimized • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch D GD S Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current IAR Repetitive Avalanche Energya L = 0.
    Published: |