VBsemi Electronics TPC8302
Dual 30V P-Channel MOSFET
| Part No. | TPC8302 |
|---|---|
| Datasheet | TPC8302 Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual 30V P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free● Trench Power MOSFET
● 100 % UIS Tested
APPLICATIONS
● Load Switches RoHS COMPLIANT S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 S1 S2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFETABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Limit - 30 ± 20 - 7.3e - 7.0e - 7.3a, b - 5.9a, b - 32e - 4.1 - 2.0a, b - 20 20 5.0 3.2 2.5a, b 1.6a, b - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. d.
