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TSF13N50M - N-Channel 550V Power MOSFET

Key Features

  • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS).
  • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching D TO-220.

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Datasheet Details

Part number TSF13N50M
Manufacturer VBsemi
File Size 292.68 KB
Description N-Channel 550V Power MOSFET
Datasheet download datasheet TSF13N50M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSF13N50M-VB TSF13N50M-VB Datasheet N-Channel 550V (D-S) Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 150 12 25 Single 0.