TSF13N50M Description
TSF13N50M-VB TSF13N50M-VB Datasheet N-Channel 550V (D-S) Power MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 150 12 25 Single 0.26.
TSF13N50M Key Features
- Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
- Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg