VBsemi Electronics UT3N06G-AE3-R
N-Channel MOSFET
| Part No. | UT3N06G-AE3-R |
|---|---|
| Datasheet | UT3N06G-AE3-R Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Available● TrenchFET® Power MOSFET
● 100 % Rg Tested
● 100 % UIS Tested
APPLICATIONS
● Battery Switch● DC/DC Converter D G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current IDM TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IAS EAS PD TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) ≤5s Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 120 °C/W. Symbol RthJA RthJF Typical 90 60 Limit 60 ± 20 4.
