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VB1204M - N-Channel MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • 100 % Rg and UIS Tested.
  • TrenchFET® Power MOSFET.
  • Compliant to RoHS Directive 2002/95/EC D G S N-Channel MOSFET.

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Datasheet Details

Part number VB1204M
Manufacturer VBsemi
File Size 270.59 KB
Description N-Channel MOSFET
Datasheet download datasheet VB1204M Datasheet

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Full PDF Text Transcription for VB1204M (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for VB1204M. For precise diagrams, tables, and layout, please refer to the original PDF.

VB1204M N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) () 1.4 at V...

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GS = 10 V ID (A) 0.6 TO-236 (SOT-23) G1 S2 3D Top View FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg and UIS Tested • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 200 V VGS ± 20 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb TA = 25 °C TA = 70 °C ID 0.6 0.45 0.5 0.35 A IDM 2.5 Avalanche Currentb Single Avalanche Energy L = 0.1 mH IAS 2.5 EAS 50 mJ Continuous Source Current (Diode Conduction)a IS 0.