Full PDF Text Transcription for VB1210 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
VB1210. For precise diagrams, tables, and layout, please refer to the original PDF.
10 V 20 0.012 at VGS = 4.5 V ID (A)a, g 9 8 Qg (Typ.) 8nC (SOT-23) G1 S2 3D FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ± 12 TC = 25 °C 9a, g Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C 6.5g 7 b, c A 4.5b, c Pulsed Drain Current IDM 32g Avalanche Current Avalanche Energy L = 0.1 mH IAS 15 EAS 11.
VB1210 Datasheet
