VBsemi Electronics VB1435
N-Channel MOSFET
| Part No. | VB1435 |
|---|---|
| Datasheet | VB1435 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® Power MOSFET● 100 % Rg and UIS Tested TO-236 (SOT-23) G1 S2 3D Top View D G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) IS Pulsed Drain Currenta IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 40 ± 20 4.8 3.6 3.8 20 13 8 3 1 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). PCB Mountb SYMBOL RthJA RthJF LIMIT 166 50 UNIT V A mJ W °C UNIT °C/W 1 VB1435 SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown V...
