VB1435 - N-Channel MOSFET

VBsemi

Key Features

TrenchFET® Power MOSFET.
100 % Rg and UIS Tested www. VBsemi. com TO-236 (SOT-23) G1 S2 3D Top View D G S N-Channel MOSFET.

VB1435 n-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	VB1435
Manufacturer	VBsemi
File Size	263.28 KB
Description	N-Channel MOSFET
Datasheet	VB1435 Datasheet

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Full PDF Text Transcription for VB1435 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for VB1435. For precise diagrams, tables, and layout, please refer to the original PDF.

VB1435 N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at ...

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VGS = 4.5 V ID (A) Configuration 40 0.035 0.040 4.8 Single FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested www.VBsemi.com TO-236 (SOT-23) G1 S2 3D Top View D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) IS Pulsed Drain Currenta IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 40 ± 20 4.8 3.6 3.