VBsemi Electronics VB2101K
P-Channel MOSFET
| Part No. | VB2101K |
|---|---|
| Datasheet | VB2101K Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Available● TrenchFET® Power MOSFET
● Ultra Low On-Resistance
● Small Size
APPLICATIONS
● Active Clamp Circuits in DC/DC Power SuppliesABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS - 100 V VGS ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID - 1.65 - 1.55 - 1.5 - 1.4 Pulsed Drain Current IDM - 3.0 A Continuous Source Current (Diode Conduction)a, b IS - 1.4 - 1.0 Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 1.0 mH IAS 4.5 EAS 1.01 mJ Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C PD 2.0 1.0 0.85 0.58 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) t≤5s Steady State Steady State Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature.
