VB2212N - P-Channel MOSFET

Product Overview

VBsemi

Part number	VB2212N
Manufacturer	VBsemi
File Size	302.54 KB
Description	P-Channel MOSFET
Datasheet	VB2212N Datasheet
Additional preview pages of the VB2212N datasheet.

Halogen-free According to IEC 61249-2-21 Definition.
TrenchFET® Power MOSFET.
100 % Rg and UIS Tested.
Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G1 S2 3D Top View S G D P-Channel MOSFET.

📁 Similar Datasheet

VB20100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20100C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20100S - High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20100S-E3 - High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20100SG - High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20120C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20120C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

Other Datasheets by VBsemi

Published: Oct 14, 2024 |