VB2212N Description
001 VB2212N P-Channel 20 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration - 20 0.071 0.090 - 3.5 Single.
VB2212N Key Features
- Halogen-free According to IEC 61249-2-21
- TrenchFET® Power MOSFET
- 100 % Rg and UIS Tested
- pliant to RoHS Directive 2002/95/EC