VBsemi Electronics VB2658
P-Channel MOSFET
| Part No. | VB2658 |
|---|---|
| Datasheet | VB2658 Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Isolated Package● High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
● Sink to Lead Creepage Distance = 4.8 mm
● P-Channel
● 175 °C Operating Temperature
● Dynamic dV/dt Rating
● Low Thermal Resistance
● Lead (Pb)-free Available Available RoHS* COMPLIANT S G D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at - 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 5.0 mH, RG = 25 Ω, IAS = - 5.3 A (see fig.
