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VB3407A
P-Channel 30 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.034 at VGS = - 10 V
- 30
0.038 at VGS = - 6 V
0.043 at VGS = - 4.5 V
ID (A)a - 5.6 -5 -4.5
Qg (Typ.) 11.4 nC
TO-236 (SOT-23)
G1 S2
3D
Top View
S G
D P-Channel MOSFET
FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested
APPLICATIONS • For Mobile Computing
- Load Switch - Notebook Adaptor Switch - DC/DC Converter
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
VDS
VGS
TC = 25 °C
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
- 30
± 20 - 5.6 - 5.1 - 5.4b,c - 4.
VB3407A Datasheet
