VBsemi Electronics VB4610N
Dual P-Channel MOSFET
| Part No. | VB4610N |
|---|---|
| Datasheet | VB4610N Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● Compliant to RoHS Directive 2002/95/EC S1 S2 G1 G2 2.85 mm D1 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg D2 P-Channel MOSFET LIMIT -60 ± 20 -4.5 -4.0 -3.5 a,b -3.0 a,b -20 -3.9 -2.1a,b -15 11.25 4.2 2.7 2 a,b 1.3 a,b -55 to 150 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient a t5s Maximum junction-to-case (drain) Steady state Notes a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c.
