VBsemi Electronics VB562K
Dual-Channel MOSFET
| Part No. | VB562K |
|---|---|
| Datasheet | VB562K Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● 100 % Rg Tested
● Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View G1 1 6 D1 3 mm S2 2 5 S1 G2 3 4 D2 2.85 mm D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 60 - 60 Gate-Source Voltage VGS ± 20 ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID 0.8 - 0.55 0.7 - 0.50 Pulsed Drain Current IDM 3.2 -2.2 Continuous Source Current (Diode Conduction)a, b IS 0.45 - 0.35 Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C PD 0.75 0.43 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t≤5s Steady State Maximum Junction-to-Lead Steady State Notes: a. Surface Mounted on FR4 board. b. t ≤ 5 s. Symbol RthJA RthJL Typical 93 130 75 Maximum 110 150 90 Unit V A W °C Unit °C/W...
