VBsemi Electronics VB7101M
N-Channel MOSFET
| Part No. | VB7101M |
|---|---|
| Datasheet | VB7101M Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● Low On-Resistance
● 100 % Rg Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● DC/DC Converters, High Speed SwitchingABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C ID TA = 70 °C IDM 100 ± 20 3.2e 2.8 e 3.0b, c 2.4b, c 25 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range IS PD TJ, Tstg 2.1 1.1b, c 2.5 1.6 1.3b, c 0.8b, c - 55 to 150 Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t5s Maximum Junction-to-Foot (Drain) Steady State Symbol RthJA RthJF Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d.
