VBsemi Electronics VB7202M
N-Channel 200V MOSFET
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● Trench Power MOSFET
● Low On-Resistance
● 100 % Rg Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● DC/DC Converters, High Speed SwitchingABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C ID TA = 70 °C IDM 200 ± 20 4e 2.8 e 3.5b, c 2.4b, c 25 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range IS PD TJ, Tstg 2.1 1.1b, c 5 3.5 1.6b, c 1.2b, c - 55 to 150 Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t5s Maximum Junction-to-Foot (Drain) Steady State Symbol RthJA RthJF Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d.