VBsemi Electronics VBA1104N
N-Channel MOSFET
| Part No. | VBA1104N |
|---|---|
| Datasheet | VBA1104N Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● Extremely Low Qgd for Switching Losses
● 100 % Rg Tested
● 100 % Avalanche Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Primary Side Switch D G S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 100 ± 20 9 6 6b, c 5b, c 40 7 3.8b, c 30 112 14 5 4b, c 2b, c - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f t ≤ 10 s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface mounted on 1” x 1” FR4 board. c. t = 10 s. d.
