VBsemi Electronics VBA1206
N-Channel MOSFET
| Part No. | VBA1206 |
|---|---|
| Datasheet | VBA1206 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● 100 % Rg and UIS Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Low-Side MOSFET for Synchronous Buck - Game Machine - PC D G S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ± 16 TC = 25 °C 20e Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 18.2 15.2b, c Pulsed Drain Current TA = 70 °C 12.1b, c A IDM 50 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS 5.1 2.2b, c Single Pulse Avalanche Current L = 0.1 mH IAS 30 Avalanche Energy EAS 45 mJ TC = 25 °C 5.7 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 3.6 2.5b, c W TA = 70 °C 1.6b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t ≤ 10 s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b.
