VBsemi Electronics VBA1806S
N-Channel MOSFET
| Part No. | VBA1806S |
|---|---|
| Datasheet | VBA1806S Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Super Trench technology Power MOSFET● Excellent gate charge x Rds (on) product(FOM)
● Very low on-resfistance Rds (on)
● 100 % Rg and UIS Tested
APPLICATIONS
● DC/DC Converter● Ideal for hfigh-frequency swfitchfing and synchronous G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) IS Pulsed Drain Currenta IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 80 ± 20 16 9 6 67 50 125 7.1 2.3 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. PCB Mount...
