VBsemi Electronics VBA1820
N-Channel MOSFET
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFETs
● Compliant to RoHS Directive 2002/95/EC S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D D G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 80 V VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 9.5 6.7 7.6 5.4 Pulsed Drain Current IDM 50 A Avalanche Current L = 0.1 mH IAS 40 Continuous Source Current (Diode Conduction)a IS 2.8 1.4 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 3.1 1.56 2.0 1.0 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 33 65 17 Maximum 40 80 21 Unit °C/W 1 VBA1820 SPECIFICATIONS TJ = 25 °C, unless otherwise no...