VBsemi Electronics VBA2101M
P-Channel MOSFET
| Part No. | VBA2101M |
|---|---|
| Datasheet | VBA2101M Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® power MOSFET● 100 % Rg and UIS tested
APPLICATIONS
● Active clamp in intermediate DC/DC power supplies● LED Lighting
● Load switch S G D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e VDS VGS ID IDM IS IAS EAS PD TJ, Tstg LIMIT -100 ± 20 -4.5 -3.6 -2.8 b, c -2.1 b, c -20 -4.5a -2.8b, c -15 11.25 27.8 17.8 3.5 b, c 2.2 b, c -55 to +150 260 THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b, f t ≤ 10 s Maximum junction-to-case (drain) Steady state SY...
