VBsemi Electronics VBA2307B
P-Channel MOSFET
| Part No. | VBA2307B |
|---|---|
| Datasheet | VBA2307B Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free● TrenchFET® Power MOSFET
● Optimized for High-Side Synchronous Rectifier Operation
● 100 % Rg Tested
● 100 % UIS Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D
APPLICATIONS
● Notebook CPU Core - High-Side Switch D G Top View S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ± 20 V TC = 25 °C -14 Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 70 °C TA = 25 °C ID TA = 70 °C IDM -13 -13b, c -11.5b, c A -45 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS -3.8 -2.1b, c Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS -22 EAS 24 mJ TC = 25 °C 4.0 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 2.6 2.4b, c W TA = 70 °C 1.5b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Notes: a.
