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VBA2307B - P-Channel MOSFET

Features

  • Halogen-free.
  • TrenchFET® Power MOSFET.
  • Optimized for High-Side Synchronous Rectifier Operation.
  • 100 % Rg Tested.
  • 100 % UIS Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D.

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Datasheet Details

Part number VBA2307B
Manufacturer VBsemi
File Size 221.86 KB
Description P-Channel MOSFET
Datasheet download datasheet VBA2307B Datasheet
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VBA2307B P-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) -30 0.007 at VGS = - 10 V 0.010 at VGS = - 4.5 V ID (A)a -14 -13 Qg (Typ.) 6.5nC FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 % Rg Tested • 100 % UIS Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D APPLICATIONS • Notebook CPU Core - High-Side Switch D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ± 20 V TC = 25 °C -14 Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 70 °C TA = 25 °C ID TA = 70 °C IDM -13 -13b, c -11.
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