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VBA2658 - P-Channel MOSFET

Features

  • TrenchFET® power MOSFET.
  • 100 % Rg and UIS tested SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View S G D P-Channel MOSFET.

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Datasheet Details

Part number VBA2658
Manufacturer VBsemi
File Size 268.22 KB
Description P-Channel MOSFET
Datasheet download datasheet VBA2658 Datasheet
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VBA2658 P-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS = -4.5 V ID (A) per leg -60 0.060 0.063 -8 FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction) IS Pulsed Drain Current a IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy IAS L = 0.1 mH EAS Maximum Power Dissipation a TC = 25 °C PD TC = 125 °C Operating Junction and Storage Temperature Range TJ, Tstg LIMIT -60 ± 20 -8 -4.75 -4.5 -32 -22.
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