VBA3316G Description
VBA3316G .VBsemi. Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY Channel-1 Channel-2 VDS (V) 30 30 RDS(on) (Ω) 0.017 at VGS = 10 V 0.021 at V GS = 4.5 V 0.009 at VGS = 10 V 0.010 at V GS = 4.5 V ID (A)a 8.0 7.5 15.0 14.0 Qg (Typ.) 12.5.
VBA3316G Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- 100 % Rg and UIS Tested
- pliant to RoHS Directive 2002/95/EC
VBA3316G Applications
- Notebook Logic dc-to-dc
- Low Current dc-to-dc