VBA3316SA Description
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.008 at VGS = 10 V 30 0.012 at VGS = 4.5 V ID (A) 8 6.8 Qg (Typ.) 15.
VBA3316SA Key Features
- Halogen-free According to IEC 61249-2-21
- TrenchFET® Power MOSFET
- 100 % UIS Tested
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC