VBsemi Electronics VBA3316SA
Dual N-Channel Field Effect Transistor
| Part No. | VBA3316SA |
|---|---|
| Datasheet | VBA3316SA Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual N-Channel Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● 100 % UIS Tested
● 100 % Rg Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Set Top Box● Low Current DC/DC S2/A 1 8 D2/K G2 2 7 D2/K S1 3 6 D1 G1 4 5 D1 SOIC-8 D2 D1 K A G2 G1 S2 S1
ABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain CurrentA Pulsed Drain CurrentB TA=25°C TA=70°C ID IDM Schottky reverse voltage VKA Continuous Forward CurrentA Pulsed Forward CurrentB TA=25°C TA=70°C IF IFM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Parameter: Thermal Characteristics MOSFET Maximum Junction-to-AmbientA t ≤ 10s Maximum Junction-to-AmbientA Steady-State Maximum Junction-to-LeadC Steady-State Thermal Characteristics Schottky Maximum Junction-to-AmbientA t ≤ 10s Maximum Junction-to-AmbientA Steady-State Maximum Junction-to-LeadC Steady-State Symbol RθJA RθJL R...
