VBsemi Electronics VBA3328
Dual N-Channel MOSFET
| Part No. | VBA3328 |
|---|---|
| Datasheet | VBA3328 Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● 100 % UIS Tested
● 100 % Rg Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Set Top Box● Low Current DC/DC D1 D2 G1 S1 N-Channel MOSFET G2 S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 TC = 25 °C 6.8a Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 5.6 6.2b, c Pulsed Drain Current TA = 70 °C 5.2b, c A IDM 30 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS 2.25 1.48b, c Single Pulse Avalanche Current L = 0.1 mH IAS 5 Single Pulse Avalanche Energy EAS 1.25 mJ TC = 25 °C 2.7 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 1.77 1.78b, c W TA = 70 °C 1.14b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Notes: a.
