VBsemi Electronics VBA4436
Dual P-Channel MOSFET
| Part No. | VBA4436 |
|---|---|
| Datasheet | VBA4436 Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free● TrenchFET® Power MOSFET
● 100 % UIS Tested
APPLICATIONS
● Load Switches - Notebook PCs - Desktop PCs - Game Stations S1 RoHS COMPLIANT S2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFETABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Limit - 40 ± 20 -6e - 5.5e - 5.3a, b - 4.9a, b - 25e - 4.1 - 2.0a, b - 20 20 4.6 3.2 2.5a, b 1.6a, b - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. d.
