VBsemi Electronics VBA5606
Dual-Channel MOSFET
| Part No. | VBA5606 |
|---|---|
| Datasheet | VBA5606 Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● 100 % Rg and UIS Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Motor Drive S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 D1 G1 S1 S2 G2 D2ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C ID TA = 70 °C IDM TC = 25 °C TA = 25 °C IS ISM L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C TA = 25 °C PD 60 ± 20 13 10 9.8 b 7.4b 45 7.6 1.6b, c 35 10 25 6.1 3.6 3b, c - 60 ± 20 - 10 - 7.8 - 6 .6b, c - 5.3b, c - 40 - 7.6 - 1.6b, c - 30 -9 20 5.2 3.1 3b, c Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg 2.28b, c 2.28b, c - 55 to 150 THERMAL RESISTANCE RATINGS N-Channel Parameter Symbol Typ.
