VBsemi Electronics VBA5840
Dual-Channel MOSFET
| Part No. | VBA5840 |
|---|---|
| Datasheet | VBA5840 Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Available● TrenchFET® Power MOSFET
● 100 % Rg and UIS Tested
APPLICATIONS
● CCFL Inverter S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 D1 G1 S2 G2 Top View S1 N-Channel MOSFET D2 P-Channel MOSFETABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) VDS 60 - 60 V VGS ± 20 TC = 25 °C 5.3 - 3.9 TC = 70 °C TA = 25 °C ID 4.3 4.3b, c - 3.2 - 3.0b, c TA = 70 °C 3.4b, c - 2.4b, c Pulsed Drain Current (10 µs Pulse Width) Source Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation IDM 20 - 25 A TC = 25 °C TA = 25 °C IS 2.6 1.7b, c - 2.8 - 1.7b, c ISM 20 - 25 L = 0.1 mH IAS 11 EAS 6.1 15 11 mJ TC = 25 °C 3.1 3.4 TC = 70 °C TA = 25 °C PD 2 2b, c 2.2 W 2b, c TA = 70 °C 1.3b, c 1.3b, c Operating Junction and Storage Temperature Rang...
