VBBC3210 Description
VBBC3210 .VBsemi. Dual N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.0170 at VGS = 4.5 V 0.0240 at VGS = 2.5 V 0.0490 at VGS = 1.8 V ID (A) 20 17 10 Qg (TYP.) 12 nC DFN.
VBBC3210 Key Features
- TrenchFET® power MOSFET