VBsemi Electronics VBBC3210
Dual N-Channel MOSFET
| Part No. | VBBC3210 |
|---|---|
| Datasheet | VBBC3210 Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® power MOSFETAPPLICATIONS
● DC/DC● Notebook system power
● POL D1 D2 3.30 mm S1 1 G1 2 3.30 mm S2 3 G2 4 D1 8 D1 7 D2 6 D2 5 Bottom View G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) c, d VDS VGS ID IDM IS IAS EAS PD TJ, Tstg LIMIT 20 ±8 20 15.8 8 a, b 6.5 a, b 40 15 2.2 a, b 15 11 20 12.8 2.5 a, b 1.6a, b -55 to +150 260 THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient t 10 s Maximum Junction-to-Case (Drain) Steady State Notes a. Package limited, TC = 25 °C. b.
