VBsemi Electronics VBBD3222
Dual N-Channel MOSFET
| Part No. | VBBD3222 |
|---|---|
| Datasheet | VBBD3222 Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● 100 % Rg Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Load Switch for PortableAPPLICATIONS
● DC/DC Converters D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e VDS VGS ID IDM IS PD TJ, Tstg Limit 20 ± 12 4.8 3 3.4b, c 2.7b, c 15 1.17 0.95b, c 1.4 0.9 1.14b, c 0.73b, c - 55 to 150 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t≤5s Maximum Junction-to-Foot Steady State Notes: a. TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d.
