VBsemi Electronics VBBD4290
The DFN3Xx2 is a leadless package. The end of t he lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing.| Part No. | VBBD4290 |
|---|---|
| Datasheet | VBBD4290 Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFETs
● 100 % Rg Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Load Switch for Portable Devices● Battery Switch S1 S2 G1 G2 Bottom View D1 P-Channel MOSFET D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS - 20 VGS ±8 V TC = 25 °C - 4g Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID - 3.8 - 3.1b, c TA = 70 °C - 2.5b, c A Pulsed Drain Current IDM - 10 Source Drain Current Diode Current TC = 25 °C TA = 25 °C IS - 2.6 - 1.7b, c TC = 25 °C 3.1 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 2.0 1.3b, c W TA = 70 °C 0.8b, c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg - 55 to 150 °C 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) Notes: t≤5s RthJA 77 Steady State RthJF 33 95 °C/W 40 a.
