VBsemi Electronics VBBD5222
The DFN3Xx2 is a leadless package. The end of t he lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing.| Part No. | VBBD5222 |
|---|---|
| Datasheet | VBBD5222 Download |
| Manufacturer | VBsemi Electronics |
| Description | Complementary MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFETs
● Ultra Low RDS(on) and Excellent Power Handling In Compact Footprint
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Load Switching for Portable Devices D1 S2 G2 G1 Bottom View S1 N-Channel MOSFET D2 P-Channel MOSFETABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted N-Channel P-Channel Parameter Symbol 5 s Steady State 5 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 20 - 20 V VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID 5.9 4.2 4.4 - 4.1 -3 3.1 - 2.9 - 2.2 A Pulsed Drain Current IDM 20 - 15 Continuous Source Current (Diode Conduction)a IS 1.8 0.9 - 1.8 - 0.9 Maximum Power Dissipationa TA = 25 °C TA = 85 °C PD 2.1 1.1 1.1 0.6 2.1 1.1 1.1 W 0.6 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)b, c 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t≤5s Steady State RthJA 50 90 60 110 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 30 40 Notes: a.
