VBC6N3010 Description
VBC6N3010 Dual N-Channel 3 0-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.012 at VGS = 10 V 30 0.019 at VGS = 4.5 V ID (A) 8.6 7.5.
VBC6N3010 Key Features
- Halogen-free Option Available
- TrenchFET® Power MOSFETs
VBC6N3010 is Dual N-Channel MOSFET manufactured by VBsemi.
| Part Number | Description |
|---|---|
| VBC6N2014 | Dual N-Channel MOSFET |
| VBC6N2022 | Dual N-Channel MOSFET |
| VBC1307 | N-Channel MOSFET |
VBC6N3010 Dual N-Channel 3 0-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.012 at VGS = 10 V 30 0.019 at VGS = 4.5 V ID (A) 8.6 7.5.