VBE1206N Description
VBE1206N N-Channel 200 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.055 at VGS = 10 V ID (A) 30 D TO-252.
VBE1206N Key Features
- TrenchFET® Power MOSFET
- 175 °C Junction Temperature
- PWM Optimized
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC