VBsemi Electronics VBE1206N
N-Channel MOSFET
| Part No. | VBE1206N |
|---|---|
| Datasheet | VBE1206N Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® Power MOSFET● 175 °C Junction Temperature
● PWM Optimized
● 100 % Rg Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Primary Side Switch G GD S S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Avalanche Current IAS Single Pulse Avalanche Energy L = 0.1 mH EAS Maximum Power Dissipation TC = 25 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 200 ± 20 30 25 160 28 3 18 96b 3a - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. t 10 s Steady State Symbol RthJA RthJC Typical 15 40 0.85 Maximum 18 50 1.1 Unit V A mJ W °C Unit °C/W 1 VBE1206N SPECIFICATIONS (TJ...
