VBE14R04
FEATURES
- Dynamic d V/dt rating
- Repetitive avalanche rated
- Available in tape and reel
- Fast switching
- Ease of paralleling
.VBsemi.
Available
DPAK (TO-252) D
IPAK (TO-251) D
GD S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
Linear Derating Factor (PCB Mount) e
Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery d V/dt c
TC = 25 °C TA = 25 °C
EAS IAR EAR
PD d V/dt
Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) d for 10 s
TJ, Tstg
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 29 m H, Rg =...
