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VBE165R10S - N-Channel Power MOSFET

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Datasheet Details

Part number VBE165R10S
Manufacturer VBsemi
File Size 288.16 KB
Description N-Channel Power MOSFET
Datasheet download datasheet VBE165R10S Datasheet

Overview

VBM165R10S / VBE165R10S / VBMB165R10S www.VBsemi.com N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max.

RDS(on) at 25 °C (Ω) Qg max.

(nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 0.5 38 4 4.

Key Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

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