VBE2412 Description
P-Channel 4 0 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) Configuration -40 0.012 0.015 -50 Single.
VBE2412 Key Features
- TrenchFET® power MOSFET
- Package with low thermal resistance
- 100 % Rg and UIS tested