VBED1101N Description
VBED1101N N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0084 at VGS = 10 V 100 0.0092 at VGS = 6.0 V 0.0117 at VGS = 4.5 V ID (A) 75a 65a 54 Qg (Typ.) 17.1 nC 5 1 234 5 D.
VBED1101N Key Features
- TrenchFET® Power MOSFET
- 100 % Rg and UIS Tested