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VBED1101N
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) 0.0084 at VGS = 10 V
100
0.0092 at VGS = 6.0 V
0.0117 at VGS = 4.5 V
ID (A) 75a 65a 54
Qg (Typ.) 17.1 nC
5 1 234
5 D
4 G
FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested
APPLICATIONS • Primary Side Switching • Synchronous Rectification • DC/AC Inverters • LED Backlighting
1, 2, 3 Source
4
Gate
5
Drain
SSS 12 3
www.VBsemi.com
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
100
V
VGS
± 20
TC = 25 °C
75a
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
62.7 28.6b, c
Pulsed Drain Current (t = 100 μs)
TA = 70 °C
24.
VBED1101N Datasheet
