VBG3316 Overview
Dual N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 30 0.010 0.011 8 Dual.
VBG3316 Key Features
- TrenchFET® Power MOSFET
- 100 % Rg and UIS Tested
Datasheet Details
| Part number | VBG3316 |
|---|---|
| Datasheet | VBG3316-VBsemi.pdf |
| File Size | 215.44 KB |
| Manufacturer | VBsemi |
| Description | Dual N-Channel MOSFET |
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