VBG3316 Description
Dual N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 30 0.010 0.011 8 Dual.
VBG3316 Key Features
- TrenchFET® Power MOSFET
- 100 % Rg and UIS Tested
- Part: VBG3316
- Manufacturer: VBsemi
- Size: 215.44 KB
Related VBsemi Datasheets
| Part Number | Description |
|---|---|
| VBG3638 | Dual N-Channel MOSFET |
| VBG5325 | N- and P-Channel MOSFET |
| VBG5638 | N- and P-Channel MOSFET |
| VBGC1101M | N-Channel MOSFET |
| VBGC1201K | Power MOSFET |