VBGC1101M Overview
VBGC1101M N-Channel 100 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () 0.080 at VGS = 10 V 100 0.090 at VGS = 6 V ID (A)d 4.5 4.0 Qg (Typ.) 4.6.
VBGC1101M Key Features
- TrenchFET® Power MOSFET
- 100 % UIS Tested
| Part number | VBGC1101M |
|---|---|
| Datasheet | VBGC1101M-VBsemi.pdf |
| File Size | 237.90 KB |
| Manufacturer | VBsemi |
| Description | N-Channel MOSFET |
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VBGC1101M N-Channel 100 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () 0.080 at VGS = 10 V 100 0.090 at VGS = 6 V ID (A)d 4.5 4.0 Qg (Typ.) 4.6.