VBGC1101M Description
VBGC1101M N-Channel 100 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () 0.080 at VGS = 10 V 100 0.090 at VGS = 6 V ID (A)d 4.5 4.0 Qg (Typ.) 4.6.
VBGC1101M Key Features
- TrenchFET® Power MOSFET
- 100 % UIS Tested
- Part: VBGC1101M
- Manufacturer: VBsemi
- Size: 237.90 KB
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