VBGC1201K Description
VBGC1201K Power MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 14 3.0 7.9 Single 0.80.
VBGC1201K Key Features
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- For Automatic Insertion
- End Stackable
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- pliant to RoHS Directive 2002/95/EC