VBGC1695 Description
VBGC1695 Power MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 0.095 25 5.8 11 Single HVMDIP.
VBGC1695 Key Features
- Dynamic dV/dt Rating
- For Automatic Insertion
- End Stackable
- 175 °C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- pliant to RoHS Directive 2002/95/EC