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VBGC1695 - Power MOSFET

Overview

VBGC1695 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 0.095 25 5.

Key Features

  • Dynamic dV/dt Rating.
  • For Automatic Insertion.
  • End Stackable.
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.