VBGC2101K Description
VBGC2101K Power MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 100 VGS = - 10 V 1.0 8.7 2.2 4.1 Single.
VBGC2101K Key Features
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- For Automatic Insertion
- End Stackable
- P-Channel
- 175 °C Operating Temperature
- Fast Switching
- pliant to RoHS Directive 2002/95/EC