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VBGC2101K - Power MOSFET

Overview

VBGC2101K Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 100 VGS = - 10 V 1.0 8.7 2.2 4.

Key Features

  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • For Automatic Insertion.
  • End Stackable.
  • P-Channel.
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.