VBGC2205M Overview
VBGC2205M Power MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 200 VGS = - 10 V 18 0.50 3.0 9.0 Single.
VBGC2205M Key Features
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- For Automatic Insertion
- End Stackable
- P-Channel
- 175 °C Operating Temperature
- Fast Switching
- pliant to RoHS Directive 2002/95/EC