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VBGC2610N - Power MOSFET

Overview

VBGC2610N Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max.

(nC) Qgs (nC) Qgd (nC) Configuration -60 VGS = -10 V 19 0.10 5.

Key Features

  • Dynamic dV/dt rating.
  • Repetitive avalanche rated.
  • For automatic insertion.
  • End stackable.
  • P-channel.
  • 175 °C operating temperature.
  • Fast switching www. VBsemi. com HVMDIP S G D S G D P-Channel MOSFET.