VBGC2610N Description
VBGC2610N Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration -60 VGS = -10 V 19 0.10 5.4 11 Single.
VBGC2610N Key Features
- Dynamic dV/dt rating
- Repetitive avalanche rated
- For automatic insertion
- End stackable
- P-channel
- 175 °C operating temperature
- Fast switching